| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method without damages, when manufacturing a metal wiring, especially copper wiring. SOLUTION: In the water treatment method, a photoresist film 104 is formed on a wafer W where a copper film 101, an SiN film 102, and a low-k film 103 are formed successively, dry etching is made with the photoresist film 104 as an etching mask, a contact hole 105 is formed, and the photoresist film 104 and a sidewall protective film (polymer film) 106 are eliminated (wet-treated) by a resist polymer removing liquid in an inner treatment chamber 30. |
