| 摘要 |
<p>In a semiconductor device of self-extinguish type, in which a channel constituting a current path is controlled by a control voltage applied to a gate electrode, the channel is constructed between an n type cathode region 12 formed in one major surface of n<-> silicon substrate 11 and p type anode region 15 formed in the other major surface of the silicon substrate and is opened and closed by the control voltage applied to a gate region 14 as well as a guard region. The guard region is formed by p<+> type guard regions 18 and 19 provided adjacent to the channels, and a p type auxiliary guard region 20 formed between the p<+> type guard regions 18 and 19 and having a lower impurity concentration than that of the guard regions 18 and 19. During the conduction state, electrons are hardly diffuse laterally underneath the guard region, and therefore upon the turn-off operation, electrons can be taken out at a high speed. Since electrons are taken out uniformly, the electrical field is not concentrated and the semiconductor device is effectively prevented from breakdown. <IMAGE></p> |
