发明名称 SPUTTERING DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide sputtering device and method high in productivity and working rate. SOLUTION: In a sputtering device provided with a carrying chamber 11 carrying a substrate 5 into a film forming chamber in a vacuum and a film forming chamber 10 separated from the carrying chamber 11 in the process of film formation, a target 2 which is not confronted with a substrate introducing port 21 of the film forming chamber 10 is provided, discharge 42 is retained with the target 2 which is not confronted with the substrate introducing port 21 as the center in the process of carrying, and the discharge is retained even in the process of carrying the substrate, by which the loss of the film forming rate at the time of discharge ignition is eliminated to increase the productivity, and also, the retaining of the discharge is executed by the target 2 which is not confronted with the substrate introducing port 21, by which the inflow of sputtering particles into the carrying chamber 11 is suppressed as possible, and the need of the maintenance of the carrying chamber 11 is almost eliminated.
申请公布号 JP2001011618(A) 申请公布日期 2001.01.16
申请号 JP19990179989 申请日期 1999.06.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYATA HIROSHI
分类号 H01L21/203;C23C14/34;(IPC1-7):C23C14/34 主分类号 H01L21/203
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