发明名称 |
Dual damascene manufacturing process |
摘要 |
A dual damascene process for forming interconnects such as contact plugs or vias. A first metal line is formed on a substrate structure. A first metal line is formed on the substrate structure. At least a stud is formed to cover a part of the first metal line. An insulation layer is formed to cover the substrate structure, the first metal line and the stud. A part of the insulation layer is removed to expose the stud. The expose stud is removed to form a contact window to expose the part of the first metal line. A metal layer is formed to fill the contact window.
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申请公布号 |
US6174804(B1) |
申请公布日期 |
2001.01.16 |
申请号 |
US19980159912 |
申请日期 |
1998.09.24 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSU CHEN-CHUNG |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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