发明名称 Dual damascene manufacturing process
摘要 A dual damascene process for forming interconnects such as contact plugs or vias. A first metal line is formed on a substrate structure. A first metal line is formed on the substrate structure. At least a stud is formed to cover a part of the first metal line. An insulation layer is formed to cover the substrate structure, the first metal line and the stud. A part of the insulation layer is removed to expose the stud. The expose stud is removed to form a contact window to expose the part of the first metal line. A metal layer is formed to fill the contact window.
申请公布号 US6174804(B1) 申请公布日期 2001.01.16
申请号 US19980159912 申请日期 1998.09.24
申请人 UNITED MICROELECTRONICS CORP. 发明人 HSU CHEN-CHUNG
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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