| 摘要 |
PURPOSE: A method for forming a metal interfacial insulating layer of a semiconductor device is provided to prevent a bending phenomenon of a contact hole sidewall by forming a nitride layer spacer on a plug contact hole sidewall for an interconnection between wirings when a stacked structure between BPSG layer and a protective layer is used as a metal interfacial insulating layer of a semiconductor device. CONSTITUTION: A lower wiring layer(22) is formed on a semiconductor substrate(21) having a junction area. A metal interfacial insulating layer(23) is formed on the total structure, and a surface of the metal interfacial insulating layer is smoothened. A protective layer(24) is formed on the total structure. The protective layer and the metal interfacial insulating layer are etched to expose a junction area of the semiconductor substrate, thereby forming a plug contact hole. Epitaxial layer(26) is selectively grown on the exposed junction area of a lower part of the plug contact hole. A nitride layer is formed on the total structure, is fully etched, thereby forming a nitride layer spacer(27) on a sidewall of the plug contact hole. In order to remove a nature oxide layer or impurity of the plug contact hole, a cleaning process is performed. A plug polysilicon layer(28) is formed on the total structure in order to make the plug contact hole be buried. The plug polysilicon layer except a part to be used as a plug and the protective layer are partially removed, thereby forming a plug. An upper wiring layer(29) is formed on the plug.
|
