| 摘要 |
PURPOSE: A high power semiconductor laser having a ridge wave guide structure and a manufacturing method thereof are provided to suppress occurrence of higher order modes during a high power operation and obtain a stable basic mode operation characteristics even at high power by reducing a change in an effective refractive index in edge portions of the semiconductor laser. CONSTITUTION: A multiple quantum well structure of a buffer layer(5), a clad layer(6), an active layer(8), a clad layer(10), and an ohmic contact layer(12) is grown on a substrate(4) by a MOCVD or other growing method. Then, a semiconductor laser having a ridge wave guide structure having a ridge portion(16) and a channel portion(17) is produced by processes of photo-resist masking, and coating an insulating layer and electrodes. After etching the ridge portion, boundary regions with the channel portion are ion-implanted with a predetermined dopant material using a photo-resist mask or an oxide-mask so as to have alleviated bandgap and effective refractive index. After masking the ion-implanted regions, new regions in the vicinity of the ion-implanted regions are ion-implanted with a new dopant material using a photo-resist mask or an oxide-mask. The ion-implantations are repeated by the number of kinds of dopant materials to be implanted. The ion-implantations are repeated with dopant materials having bandgaps different from the bandgap or with different effective refractive indices according to depth of ion-implantation and dose of dopants. The resultant structure are subjected to an annealing process to produce a high power semiconductor laser having a ridge wave guide structure.
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