| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to form a cylinder type storage node by removing only an upper portion of a conductive layer when forming an inner cylinder type storage node. CONSTITUTION: A method for forming a storage node of a semiconductor device comprises the following steps. An insulating interlayer(15) with a storage node contact plug(17) is formed on an upper portion of a semiconductor substrate(11). A sacrificial insulating layer(19) is formed on an upper portion of the insulating interlayer(15). A conductive layer for storage node(21a) is formed on the surface of the whole structure. An upper portion of the conductive layer for storage node(21a) is removed by etching only the upper portion of the conductive layer for storage node(21a). A cylinder type storage node is formed therefrom. An MPS layer is formed within the cylinder type storage node. The sacrificial insulating layer(19) is removed therefrom. A dielectric layer and a plate electrode are formed thereon.
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