| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to form a bit line after removing an interfacial insulating layer, and prevent a shift of bit line and a bit line's modification by minimizing a contact area between the bit line and the interfacial insulating layer. CONSTITUTION: A stacked structure among a gate insulating layer(13), a gate electrode and a mask insulating layer pattern(15) is formed on a cell area and a peripheral circuit area of the semiconductor substrate(11). An insulating layer spacer is formed on a sidewall of the stacked structure. The first interfacial insulating layer having a bit line contact plug is formed on the stacked structure. A pad nitride layer(25) is formed on only a cell area of the stacked structure. The first insulating layer and the bit line contact plug of the peripheral circuit area are etched by using the pad nitride layer pattern as an etching mask, and thus the mask insulating layer pattern is exposed. The second interfacial insulating layer(29) is formed on the total structure. A bit line contact mask exposing a bit line contact part on the bit line contact plug is used as an etching mask, and thus the second interfacial insulating layer(29) and a pad nitride layer of the cell area, and the second interfacial insulating layer of the peripheral circuit area are removed. A bit line connected to the bit line contact plug is formed.
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