| 摘要 |
PURPOSE: A method for forming an isolation layer is to remove a defect present at an upper portion of a trench type isolation layer, thereby improving the reliability of a device. CONSTITUTION: The method comprise the steps of: sequentially forming a pad oxide(42) and a pad niride layer(43) on a semiconductor substrate(41); etching the pad oxide, the pad nitride layer and the substrate to a predetermined depth to form the first trench; forming a spacer(46) at a sidewall of the first trench; etching the substrate to a predetermined depth using the space as a mask to from the second trench; and forming an insulating layer(49) on the resulting structure so that the second trench is buried, followed by removing the insulating layer, the pad nitride layer and the pad oxide so that the substrate is exposed, to form the isolation layer.
|
