| 摘要 |
PURPOSE: A gate forming method of a semiconductor device is to prevent a lifting of a tungsten film due to a washing when using a tungsten nitride film as a barrier metal film. CONSTITUTION: A method for forming a gate of a semiconductor device comprises the steps of: forming a gate oxide film(11), a doped polysilicon film(12), a tungsten nitride film(13), and a tungsten film(14) in this sequence on a semiconductor substrate(10); forming a hard mask(15) on the tungsten film; thermal processing the semiconductor substrate and then crystallizing the tungsten nitride film, and at the same time forming a tungsten silicide nitride film(13A) on an interface between the tungsten nitride film and the polysilicon film; and etching the tungsten film, the tungsten nitride film, the tungsten silicide nitride film, and the polysilicon film by using the hard mask and then forming a gate(100). The method further comprises the step of washing the semiconductor substrate after forming the gate. The washing is conducted by an ACT washing.
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