| 摘要 |
PURPOSE: A polysilicon interconnection forming method of a semiconductor device is to prevent a void from generating by forming a profile of a gate electrode including a polysilicon in the form of positive by a regulation of a polysilicon deposition temperature. CONSTITUTION: The method for forming a polysilicon interconnection of a semiconductor device comprises the steps of: depositing a polysilicon film on a silicon substrate under the temperature of 450-550 deg. C; selectively etching the polysilicon film; and forming the side wall of the polysilicon film patterned by the etching in the form of positive. The polysilicon film is a gate electrode, a bit line, or a capacitor electrode. The polysilicon film is deposited in a furnace or a CVD(chemical vapor deposition) equipment. The method for manufacturing a semiconductor device comprises the steps of: depositing a polysilicon film(3) on a silicon substrate(1) under the temperature of 450-550 deg. C; forming a tungsten silicide film(4) and a mask insulating film(5) on the polysilicon film; selectively etching the mask insulating film and then forming a mask insulating film pattern; and etching the tungsten silicide film and the polysilicon film by using the mask insulating film pattern as an etching barrier.
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