| 摘要 |
PURPOSE: A method for manufacturing a conductive line of a semiconductor device using multi-level etching is provided to improve a gap-filling characteristic of an interlayer dielectric in a subsequent process by optimizing an etching profile of a word line or bit line, and to increase yield by preventing a void and residue caused by the void. CONSTITUTION: A conductive layer including a polysilicon layer and a mask insulating layer(23) is formed on a substrate(20) having a predetermined lower layer. A photoresist pattern for a conductive line is formed on the mask insulating layer. The mask insulating layer is selectively etched by using the photoresist pattern as an etching mask. A part of the exposed conductive layer is selectively etched, wherein a polymer is passivated on a sidewall of the etched conductive layer to perform an incline-etching process. The remaining photoresist pattern and the polymer are eliminated. The rest of the conductive layer is selectively etched by using the mask insulating layer as an etching mask.
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