| 摘要 |
PURPOSE: A program bit control circuit of a flash memory device is provided to control a process, a supply voltage and a cell characteristics with the most appropriate bit, by controlling the number of program bit by detecting a zero bit with a digital method. CONSTITUTION: A program bit control circuit of a flash memory device includes: an input data latch block(100) to latch an input data and to output the latch data by synchronizing the latched data to the second clock; a limit bit control block(200) to limit the number of maximum zero bit which can be programmed at one time according to a limit signal; and a program bit control block(300) to output the zero bit of the latch data as a program data after dividing the zero bit k times, if the limit bit is larger than (k-1) times of the zero bit of the latch data and is not larger than k times of the zero bit of the latch data, according to the first clock by inputting the limit data being output from the limit bit control block. The circuit can reduce the size of a drain pumping circuit by limiting the number of zero bits in a low voltage flash memory device.
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