| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to solve a problem lowering an isolation characteristic due to a silicon contamination. CONSTITUTION: A method for forming an isolation layer of a semiconductor device comprises the following steps. The first and the second insulating layers with different etching selection ratios are formed on an upper portion of a silicon substrate(11). The second insulating layer is removed to expose a part of the first insulating layer by using a dry etching process. The first insulating layer is etched to expose the silicon substrate(11) by using the dry etching process. An active region is formed by using a selective epi growth method. An isolation layer is formed as the second patterned insulating layer.
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