| 摘要 |
PROBLEM TO BE SOLVED: To improve workability by removing a resist film used as a mask in ion implantion step. SOLUTION: This semiconductor device manufacturing method includes steps of using as a mask a resist film 7 formed on an interlayer insulating film, consisting of TEOS films 4, 6, a BPSG film 5, etc., which covers a titanium silicide film 3 on a diffusion layer 2 formed on a semiconductor substrate 1, making a contact hole 8 on the substrate 1 via the insulating film, and then removing the resist film 7. In this case, the step of removing the resist film 7 comprises the ashing step of using O2 plasma, a reverse sputtering step using an argon gas, and a cleaning step of using sulfuric acid and hydrogen peroxide.
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