发明名称 GAS DISTRIBUTION APPARATUS FOR SEMICONDUCTOR PROCESSING
摘要 <p>A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support member. The baffle plate can have a nonuniform thickness and geometry-controlled openings to achieve a desired gas distribution. In one arrangement the baffle plate is conical in shape with uniform diameter holes extending different distances through the baffle plate to achieve a uniform pressure of gas through outlets in a planar bottom surface of the baffle plate. In another arrangement, the holes have progressively larger diameters in a direction away from the location of the centrally located gas supply outlet. The shape of the baffle plate and/or configuration of the holes can be designed to achieve a desired gas pressure distribution.</p>
申请公布号 WO2001003163(A1) 申请公布日期 2001.01.11
申请号 US2000016143 申请日期 2000.06.12
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