| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to increase easily a capacitance of the capacitor by forming a hemi-spherical grain at a lower electrode of a crown floating capacitor using a nitride layer and an oxide layer capable of a selective etching. CONSTITUTION: An etching stopper layer and a planarizing layer(2) are deposited on a substrate(1) having a semiconductor device and a metal interconnection sequentially. After forming the planarizing layer and a nitride layer capable of a selective etching, a contact hole is formed to expose a particular region of the semiconductor device. A lower electrode of a capacitor is formed by depositing a polysilicon(7,9) on the contact hole and the nitride layer and by patterning thereof. All of an insulating layer except to a part of the insulating layer placing at the lower portion of the lower electrode is removed to expose a part of the planarizing layer. A hemi-spherical grain(11) is grown on the exposed lower electrode of the capacitor, thereby increasing a surface area of the lower electrode. After removing the insulating layer remaining at the lower electrode, the planarizing layer is removed and a dielectric layer and an upper electrode are formed.
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