发明名称 |
Process for preparation of diffusion barrier for semiconductor |
摘要 |
A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.
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申请公布号 |
US6171958(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19980006948 |
申请日期 |
1998.01.14 |
申请人 |
POSTECH FOUNDATION (KR) |
发明人 |
RHEE SHI WOO;YUN JU YOUNG |
分类号 |
C23C16/34;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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