Resist pattern forming method utilizing multiple baking and partial development steps

摘要

An improved method of forming a resist pattern permitting control of a resist profile of a chemically amplified-type resist is provided. A chemically amplified-type resist is exposed to light using a mask. The resist is then baked by PEB at a first temperature, and developed halfway. The resist is baked again at a second temperature lower than the first temperature, and then fully developed. A resist pattern is thus obtained.