METHOD FOR MANUFACTURING A VIA CONTACT OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a via contact of a semiconductor device is provided to increase an etch selectivity of a photoresist layer and to prevent an etching process from stopping on an anti-reflection coating(ARC) SiON layer formed on a metal layer, by etching an underlayer for forming a via contact using two etching processes with different etching selectivity. CONSTITUTION: A metal layer(21), a TiN layer(23) and an anti-reflection coating(ARC) SiON layer(25) are sequentially formed on a silicon substrate. An oxidation layer(27) is formed on the entire structure. A via contact mask is formed by applying a photoresist layer on the oxidation layer. The oxidation layer is firstly dry-etched by using the via contact mask as an etching mask. The exposed ARC SiON layer and Ti layer are secondly dry-etched by using a different etching condition. The via contact mask is eliminated.