Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same,申请号US09/332894-传众专利搜索

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发明名称	Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same
摘要
申请公布号	US6168985(A)	申请公布日期	2001.01.02
申请号	US09/332894	申请日期	1999.06.15
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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