发明名称 Static protection circuit for use in a semiconductor integrated circuit device
摘要 A static protection circuit has a first MOS transistor of a P-channel type whose source-drain channel is connected between a signal line leading to an external connection terminal and ground; it also has a second MOS transistor of a P-channel type. This second MOS transistor has its drain connected to the gate of the first MOS transistor, has its source connected through a first resistor to a power source line, and has its gate connected through a second resistor to ground.
申请公布号 US6169312(B1) 申请公布日期 2001.01.02
申请号 US19980128470 申请日期 1998.08.04
申请人 ROHM CO., LTD. 发明人 HIRAGA NORIAKI
分类号 H01L27/04;H01L21/822;H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L27/04
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