Semiconductor device with antifuse

摘要

In a DRAM with an antifuse for programming a defective address, the antifuse and one electrode of a capacitor are connected to a shared node and the other electrode of the capacitor receives a boost signal. To blow the antifuse, the shared node is set high. To maintain the antifuse unblown, the shared node is set low. Then the boost signal is raised high to boost the shared node. Even when the resistance value of antifuse 1 is decreased, excessive current does not flow. This eliminates the necessity of providing a protection circuit as conventional and thus reduces circuit scale.