| 摘要 |
A GaAs-InGaP triangular-barrier optoelectronic switch (TBOS) is disclosed, wherein two i-InGaP layers are formed on both sides of the p+-GaAs layer in the conventional triangular-barrier structure. By introducing avalanche multiplication and carrier confinement into the device operation, S-shaped negative-differential-resistance (NDR) performances are observed in the I-V (current-voltage) characteristic curves under normal and reverse operation modes. Moreover, the TBOS of the present invention shows a flexible optical function because the barrier height is associated with incident light. Owing to the incident light changing the potential barrier height for the electrons thermionically emitted over it, the I-V characteristics of the TBOS are optically controllable.
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