| 摘要 |
PROBLEM TO BE SOLVED: To surely remove residues consisting of chlorine and to prevent the generation of corrosion on a metal wiring, bonding pads and the like. SOLUTION: The manufacturing method of a semiconductor device is a method, where a contact hole 3 is bored in an insulating film 2 on a semiconductor substrate 1 having a lower metal wiring layer 10 and after a Ti/TiN layer 4 and a metal film 5 are formed on the surface of the contact hole 3 and the surface of the film 2 other than the hole 3, the film 5 and the layer 4 are etched back, in such a way that the surface of the film 2 is exposed to form a metal plug 7. After that, a plasma is generated in an atmosphere of a mixed gas produced by applying argon to sulfur hexafluoride to have the plasma irradiated on the substrate 2, and dry cleaning is performed to remove residual chlorine on the surface of the film 2 and the surface of the plug 7.
|
