| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
A semiconductor device having a memory device and a logic device formed together on a single chip is provided. A first element region and a second element region of a semiconductor substrate are formed spaced apart from each other with an isolation region therebetween. A floating conductive film is provided on the isolation region. |
| 申请公布号 |
US6162674(A) |
申请公布日期 |
2000.12.19 |
| 申请号 |
US19990357916 |
申请日期 |
1999.07.21 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MOTONAMI, KAORU |
| 分类号 |
H01L21/8234;H01L21/82;H01L21/8239;H01L21/8242;H01L27/088;H01L27/10;H01L27/105;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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