| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric memory which is hard to produce unwanted deformation during processing a dielectric capacitor, its manufacturing method, and a dielectric capacitor. SOLUTION: This dielectric memory 10 is provided with a transistor 10A, a dielectric capacitor 10B and interlayer insulating films 16 and 17 formed thereamong. The interlayer insulating film 16 is formed on a substrate 11 in which the transistor 10A is formed, and the interlayer insulating film 17 is formed on the interlayer insulating film 16. Grooves 17a and 17b are formed on the interlayer insulating film 17. The dielectric capacitor 10B is composed of a laminate, consisting of a first electrode layer 18 and a dielectric film 19 which are buried in the grooves 17a and 17b in the interlayer insulating film 17, and a second electrode layer 20. Since the planar shape of the dielectric capacitor 10B in a plane parallel to the film surface of the interlayer insulating film 17 is almost a regular polygon, unwanted deformations hardly occur during the processing of the surface of the dielectric capacitor 10B. |
