METHOD FOR FORMING STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a charge storage electrode of a semiconductor I provided to form a charge storage electrode contact hole and a charge storage electrode by using only one mask. CONSTITUTION: An insulating layer(22) is formed on a semiconductor substrate(21). The first type photoresist layer is applied on the insulating layer(22). The first type photoresist layer is exposed by using a mask. The first photoresist layer pattern is formed by developing the first type photoresist layer. A contact hole is formed by etching the insulating layer(22). The first photoresist layer pattern is removed. A conductive layer is deposited on the whole structure. The second type photoresist layer is applied on the conductive layer. The second type photoresist layer is exposed by using the same mask. The second photoresist layer pattern is formed by developing the second type photoresist layer. A charge storage electrode(25') is formed by etching conductive layer.