| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve thermal durability at an electrical joint part with an electrode of a large-power semiconductor device. SOLUTION: A bump part 6 is arranged on each emitter electrode 2 of an Si chip 1, where an emitter electrode 2 is formed on a front-surface side, with a joint member 4 formed via the bump part 6. The joint member 4 comprises Mo, whose thermal expansion factor is similar to that of the Si chip 1. A lead 3 is drawn out via the joint member 4. A heat radiating plate 8 is arranged on the rear-surface side of the Si chip 1. The heat radiating plate 8 comprises AlN whose thermal expansion factor approximates that of the Si chip 1. With the Si chip 1 clamped between the joint member 4 and the heat radiating plate 8 in this way, thermal stresses caused by the difference in thermal expansion factors is suppressed from occurring. Thus, thermal durability at the electrical joint part with the Si chip 1 is improved.</p> |
