| 摘要 |
PROBLEM TO BE SOLVED: To form lamination structure that is made of a flat III-family nitride semiconductor crystal with improved crystallizability on an Si single crystal substrate by specifying the content of the oxide of gallium of an oxide buffer with n-type conductivity that is formed in contact with the Si single crystal substrate. SOLUTION: An oxide buffer layer 102 contains the oxide of gallium Ga larger than 50 wt.%. More specifically, the oxide buffer layer 102 is composed by the mixture of Ga2O3, for example, containing 50 wt.% Ga2O3 or larger and indium oxide In2O3. Also, the oxide buffer layer 102 is composed by an oxide layer with n-type conductivity. Also, Si single crystal with n-type conductivity is used for an Si single crystal substrate 101 corresponding to the n-type oxide buffer layer 102. As a result, lamination structure that is made of III- family nitride semiconductor crystal with a flat surface and improved crystallizability can be grown on the buffer layer 102. |
