METHOD FOR FORMING FIELD OXIDE FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a field oxide layer of a semiconductor device is provided to improve the reliability of a semiconductor device by changing a shape of a field oxide layer. CONSTITUTION: A conductive layer is formed on a semiconductor substrate(11). An insulating layer pattern(13) is formed to define a field region on the conductive layer. A field oxide layer(15) is grown on the semiconductor substrate(11) by performing a thermal oxidation process. The field oxide layer(15) is etched selectively to reduce a stepped portion of the field oxide layer(15). An edge portion of the field oxide layer(15) is located at a boundary between the semiconductor substrate(11) and the conductive layer by etching the field oxide layer(15). The conductive layer is removed.