| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device using multi-level aluminum sputtering is provided to improve a filling characteristic of an aluminum layer, by using a multi-level sputtering process without an additional purchase or modification of an equipment. CONSTITUTION: An interlayer dielectric(11) is formed on a wafer having a predetermined lower layer. A contact hole and a line trench penetrating the interlayer dielectric are formed to expose the lower layer. The first aluminum layer that is an aluminum seed layer, is formed on the entire surface of the resultant structure by using a processing pressure of less than 0.7 m Torr. The wafer is heated. The second aluminum layer is formed on the first aluminum layer to the extent that the contact hole is filled up, by using a processing pressure of less than 0.7 m Torr. The third aluminum layer(15) is formed on the second aluminum layer to the extent that the line trench is filled up, by using a processing pressure from 0.7 to 2 m Torr.
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