COLUMN REDUNDANCY CIRCUIT OF SEMICONDUCTOR MEMORY

摘要

PURPOSE: A column redundancy circuit of a semiconductor memory is provided which increases the operation speed of a large integrated semiconductor circuit where a memory array is divided into a number of array units. CONSTITUTION: A column redundancy circuit of a semiconductor memory enables a large integrated semiconductor circuit, where a memory array(44) is divided into a number of array units, to be appropriate for being operated in a high frequency. Each of the array units in the memory array include a number of normal memory cells and a number of redundancy memory cells, and redundancy data stored in the redundancy memory cells are output to the first main amp(46), and normal data stored in the normal memory cells are output to the second main amp(47). A column redundancy part(45) outputs a column address and a row address, and a redundancy enable signal according to the short state of a fuse. And, a switching part(48) outputs one of the redundancy data from the first main amp or the normal data from the second main amp to a data output buffer according to the logic state of the redundancy enable signal.