发明名称 PLASMA PROCESSOR, AND CONTROL METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a plasma processor which prevents plasma from becoming incapable of being equalized due to the change of density of distributed electrons in the position above or below the plasma generated within a container, in a plasma processor which performs deposition. SOLUTION: This is a plasma processor which has a container 1, an electromagnet 8 for forming a magnetic field parallel with the surface of the processed material on a pedestal 7, being arranged around it, and an antenna 11 for injecting electromagnetic waves into the container 1, being arranged on the ceiling plate 3 of the container 1. A probe 20 for measurement of electron density distribution is arranged within the container 1, so that it can measure the state of electron density distribution in the horizontal position, with its position is changed into the horizontal direction. In this way, the plasma is processed by measuring the electron density distribution, knowing the position of equal distribution state, and adjusting the level of the pedestal, so that the surface of the processed material may be arranged in that position.
申请公布号 JP2000349032(A) 申请公布日期 2000.12.15
申请号 JP19990158060 申请日期 1999.06.04
申请人 MITSUBISHI HEAVY IND LTD 发明人 SHIMAZU TADASHI;INOUE MASAHIKO
分类号 H01L21/302;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/302
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