| 摘要 |
PROBLEM TO BE SOLVED: To prepare a high purity isotopic silicon crystal film in which the compsns. of 28Si, 29Si and 30Si and controlled and having good crystallinity. SOLUTION: This is a method for producing an isotopic silicon crystal film in which a silicon isotope of 28Si, 29Si or 30Si has a compsn. different from the ratio of a natural isotope by plasma CVD using silicon fluoride in which the silicon isotopic ratio is changed as a gaseous starting material, to the plasma CVD reaction, gaseous silicon fluoride, rare gas and gaseous hydrogen are fed in the ratios of gaseous silicon fluoride/rare gas: 0.04 to 1 and gaseous silicon fluoride/gaseous hydrogen: 0.04 to 1, and moreover, unreacted gaseous silicon fluoride is circulated through the CVD reaction.
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