Semiconductor memory device allowing efficient column selection

摘要

In a memory mat of a semiconductor memory device according to the present invention, a main column select line is provided for every n column addresses and a n sub column select lines are arranged for every main column select line (n is a natural number). In response to a column address signal, a main column select line is selected and a burst circuit and a sub decoder activate a corresponding sub decode signal. A sub column decoder drives a sub column select line according to the states of the main column select line and the sub decode signal.