| 摘要 |
PROBLEM TO BE SOLVED: To make non-reacting with temperature coefficients of a temperature hysteresis error and an offset error due to a film stress by a method wherein a compression part and a stretching part are formed on a surface of a substrate, and a resistor is positioned between the compressed part and the stretched part of the surface. SOLUTION: First, a semiconductor substrate having first and second surface is provided confronting to each other. The first surface of the semiconductor substrate is doped, and a pressure resistor or a pressure resistance net and an interconnection line of a first group are formed. The interconnection line of a second group is adhered to or disposed on the first surface of the semiconductor substrate. At least one passivation layer is adhered to or disposed on the first surface of the semiconductor substrate, and the passivation layer is pattered. Thereafter, cavities are etched or formed in the second surface of the semiconductor substrate, and a pressure-sensitive diaphragm is formed in the semiconductor substrate, and the pressure resistor and the interconnection line of the first group are positioned in the diaphragm.
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