MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which facilitates ion implantation process. SOLUTION: P-type impurity ions are implanted without a mask to form a rediffusion region 43 continuous with a source and drain region 36a in an N well 16. Thereafter, the N well 16 is covered with the resist and N-type impurity ions are implanted to form a rediffusion region which is continuous with a source and drain region 39a in a P well 17. The implantation dosage of the P-type impurity ions is smaller than that of the N-type impurity ions.