| 摘要 |
PROBLEM TO BE SOLVED: To obtain a magnetoresistive effect film and a magnetoresitive ele ment, which show linear large resistance change before and after zero magnetic field and are superior in thermal stability. SOLUTION: In a magnetoresistive effect film, magnetic layers which are subjected to replacement connection with an antiferromagnetic material and to which a replacing bias is applied are laminated via a nonmagnetic layer. An antiferromagnetic thin film (PtMn, PdMn, NiMn) is laminated on a base material layer (Zr, Hf, Zr-Hf, Zr-Co, Zr-Au, Ni-O, Co-O, Fe-O). Mean roughness of the surface is set at 1-5Å. A conducting layer, composed of Cu or Ag or Au or alloy selected from at least two kinds out of them, is formed adjacent to a magnetic thin film detecting a magnetic field. A layer composed of Zr or Ta or Zr-O or Ta-O or mixture of them is laminated adjacent to the conducting layer. In a magnetoresistive effect element, one side magnetic thin film which is not adjacent to the magnetoresistive effect film and the antiferromagnetic thin film is made a single magnetic domain by generating sufficient bias magnetic field.
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