LOW TURN-ON VOLTAGE InP SCHOTTKY DEVICE AND METHOD FOR MAKING THE SAME

摘要

A Schottky diode, and a method of making the same, which is fabricated on InP material (1) and employs a Schottky layer (9) including InxAll-xAs with x > 0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more A1InAs, the increase in A1InAs being terminated before the proportion of A1InAs within the last period (adjacent the anode metal) exceeds 80 %. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.