| 摘要 |
PROBLEM TO BE SOLVED: To realize a ridge waveguide type semiconductor layer device with good reliability and its manufacturing method by improving laser characteristic. SOLUTION: The device comprises a clad layer 3 laminated on a GaAs substrate 2 one by one, an active layer 4, a clad layer 5, a GaAs cap layer 6, a ridge part 7 formed by etching from right and left of a central part of the GaAs cap layer 6 to the middle of the clad layer 5 leaving the central part thereof, GaAs current constriction layers 8, 8 having the ridge part 7 on the clad layer 5 between and a GaAs contact layer 9. A width L0 of the GaAs cap layer 6 is made narrower than an upper end width L1 of the clad layer 5 adjacent to the GaAs cap layer 6 for covering an upper edge face of the clad layer 5 with the GaAs current constriction layers 8, 8. Furthermore, in this method, the GaAs cap layer 6 is etched by using ammonia etchant.
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