发明名称 MAGNETO-RESISTANCE EFFECT HEAD
摘要 PROBLEM TO BE SOLVED: To prevent dielectric breakdown due to static electricity generating in the production process of a magnetic head or the like even when the gap length is de creased and a lower insulating layer and an upper insulating layer are made thin in a magnetoresistance effect head which consists of a MR sensor having a magnetoresistance effect or macro magnetoresistance effect between a lower shield layer and an upper shield layer, an electrode layer electrically connected to the MR sensor, and the lower insulating layer and the upper insulating layer magnetically and electrically insulating the MR sensor and electrode layer from the shield layers. SOLUTION: In this head, the portion (having a second lower insulating layer 22 and a second upper insulating layer 52) where an MR sensor 30 does not face a lower shield layer 10 or an upper shield layer 60 consists of insulating films having lower resistance than that in the portion (having a first lower insulating layer 21 and a first upper insulating layer 51) where the sensor 30 faces the lower or upper shield layer 60. Even when charges due to static electricity or the like accumulate in the electrode layer or shield layers, a microcurrent generates through the insulating films having lower resistance, which reduces the potential difference between the electrode layer and the shield layers. Therefore, dielectric breakdown of the insulating layers by static electricity can be prevented.
申请公布号 JP2000331315(A) 申请公布日期 2000.11.30
申请号 JP19990136758 申请日期 1999.05.18
申请人 HITACHI LTD 发明人 ODAI SHIROYASU;KOMURO MATAHIRO
分类号 G11B5/31;G11B5/39;G11B5/40;(IPC1-7):G11B5/39 主分类号 G11B5/31
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