| 摘要 |
PROBLEM TO BE SOLVED: To form a resist layer in a less number of processes and avoid damaging active layers, etc., by including a step of forming a surface protection film so as to cover the surface of an active layer, and stripping a resist layer formed on the surface protection layer leaving this film on the active layer surface. SOLUTION: A lower layer resist 7 is etched by RIE, etc., to reduce the film thickness of the lower layer resist 7 until exposing the surface of an insulation film 10 on a lower gate electrode 2. An upper layer resist 8 on the lower layer resist 7 is coated, exposed and developed to form a pattern, and the lower gate electrode 2 in openings and the insulation film 10 on a lower layer gate electrode pad 4 are removed by RIE, etc. An electrode material of the upper layer gate electrode 9 is deposited on the entire surface, and the upper layer gate electrode 9 only on the lower layer gate electrode 2 and the lower gate electrode pad 4 is left by a lift-off method for stripping the resists 8, 7.
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