| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting diode, together with its manufacturing method, of high light-emitting output with no defect. SOLUTION: A double hetero structure is provided wherein, by a liquid-phase epitaxial growth, a p-type AlGaAs clad layer 4, p-type AlGaAs active layer 2, and n-type AlGaAs window layer 1 are grown on a p-type GaAs substrate 5. Here, the p-type AlGaAs clad layer 4 is grown, to which a material solution whose crystal-mixing ratio is larger than that of the p-type AlGaAs clad layer 4 is allowed to contact, and its residue is dissolved and removed before the p-type AlGaAs active layer 2 is grown. |
