METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to restrain efficiently a short channel effect and prevent a channeling effect by forming a double self HLDD(Halo Lightly Doped Drain) transistor. CONSTITUTION: A field oxide layer(22) for defining an active region and a field region is formed on a semiconductor substrate(21). A gate oxide layer(23) is formed by performing a thermal oxidation process for a surface of the semiconductor substrate(21). A polysilicon layer(24) is deposited on the gate oxide layer(23) by using a CVD(Chemical Vapor Deposition) method. A gate meta layer(25) and a nitride layer(26) are formed thereon. Gates(25,24) are defined by stripping parts of the nitride layer(26), the gate metal layer(25), the polysilicon layer(24), and the gate oxide layer(23). Halo ions are implanted on the whole surface of the substrate(21). A semi-LDD(Lightly Doped Drain) layer(31) is formed by depositing an oxide layer and a nitride layer or an SiON layer on the surface of the substrate. An LDD ion implantation process is performed on the substrate(21). A gate sidewall(29) is formed by depositing and etching a nitride layer and an oxide layer on the whole surface of the substrate(21). A source/drain is formed by performing an ion implantation process. An interlayer dielectric, a metal line, and a passivation layer are formed sequentially thereon.