发明名称 COMPLIANT SUBSTRATE IN PARTICULAR FOR DEPOSIT BY HETERO-EPITAXY
摘要 <p>The invention relates to a compliant substrate (5) comprising a carrier (1) and at least one thin layer (4), formed on the surface of the carrier and intended to receive, in integral manner, a stress-giving structure. The carrier (1) and the thin layer (4) are joined to one another by joining means (3) such that the stresses brought by said structure are absorbed in whole or in part by the thin layer (4) and/or by the joining means (3) which comprise at least one joining zone chosen from among the following joining zones: a layer of microcavities and/or a bonding interface whose bonding energy is controlled to permit absorption of said stresses.</p>
申请公布号 EP1051739(A1) 申请公布日期 2000.11.15
申请号 EP19990901662 申请日期 1999.01.29
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 ASPAR, BERNARD;BRUEL, MICHEL;JALAGUIER, ERIC;MORICEAU, HUBERT
分类号 H01L21/02;H01L21/20;H01L21/265;H01L21/762;H01L27/12;(IPC1-7):H01L21/20 主分类号 H01L21/02
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