MANUFACTURING METHOD OF THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a TFT is provided to be capable of simplifying fabricating process and saving fabricating costs by forming an etch stopper pattern with an organic insulating layer. CONSTITUTION: First, a gate insulating layer(104) and a semiconductor layer(106) are formed on a glass substrate(100) having a gate electrode(102). Then, an etch stopper pattern(108a) of organic insulator material is formed on the semiconductor layer on the gate electrode. Next, an n+ semiconductor layer(110) and a metal wire layer are formed on the semiconductor layer including the etch stopper pattern. Then, a source/drain electrode(112a) is formed by partially etching the metal wire layer with a photolithography process. Finally, the n+ semiconductor layer and the semiconductor layer are etched by using the source/drain electrode as a mask.