| 摘要 |
A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film. A first insulating film is formed on the transfer gate, and a second insulating film is formed on the gate insulating film at both sides of the transfer gate. A light-shielding layer is formed at the sides of the photodiode and on the first and second insulating films to be electrically connected with the photodiode. A third insulating film is formed on the light-shielding layer including the photodiode.
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