| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal having a stabilized meniscus in the growth of single crystal, prescribing the optimum B2O3 amount not causing precipitation, etc. SOLUTION: The instability of meniscus in the growth of single crystal is improved by using a small amount of B2O3 6 having an amount to cover a gap of a contact part of a PBN container 7 and a GaAs single crystal 5 as a lower limit and such an amount as to expose part of the surface of a GaAs single crystal to an atmosphere as an upper limit. Not only arsenic vaporized once can be returned to a melt (single crystal) but also, due to the small amount of B2O3, the occurrence of precipitate (B13As2) is controlled by using the B2O3 in such an amount as to expose the whole surface of the upper part of the crystal to an atmosphere.
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