| 摘要 |
A semiconductor processing method of providing a polysilicon film having induced outer surface roughness includes, a) providing a substrate within a chemical vapor deposition reactor; b) chemical vapor depositing an in situ conductively doped amorphous silicon layer over the substrate within the reactor at a first temperature, the first temperature being below 600 DEG C., the doped amorphous silicon layer having an outer surface of a first degree of roughness; c) within the chemical vapor deposition reactor and after depositing the doped amorphous silicon layer, raising the substrate temperature at a selected rate to an annealing second temperature, the annealing second temperature being from 550 DEG C. to 950 DEG C.; and d) maintaining the substrate at the annealing second temperature for a period of time sufficient to convert the doped amorphous layer into a doped polysilicon layer having an outer surface of a second degree of roughness, the second degree of roughness being greater than the first degree of roughness, the substrate not being removed from the reactor nor exposed to oxidizing conditions between the time of deposition of the amorphous silicon layer and its conversion to polysilicon.
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